<^.mi~(,onauctot -j to duct , (j na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SC2518 description ? high collector-emitter sustaining voltage- : vcecksusp 400v(min) ? low collector saturation voltage ? high speed switching applications ? designed for switching regulator, dc-dc converter and ultrasonic applicance applications. absolute maximum ratings(ta=25x:) pin 1.base 1. collector s.bulltter to-220c package symbol vcbo vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous total power dissipation @ tc=25'c junction temperature storage temperature range value 500 400 8 5 10 2.5 40 150 -55-150 unit v v v a a a w "c "c t **q u t t a ' i 1 h i k t f _ c a ?* e ?* \ -. '? v h c ! , dim a b r d f g h, k k l q r s u v 1 1 ^ 1 f ^ htl ^h m min 15.50 .45 8.t>(> -?? * n max 15.90 10.20 4.50 0.90 3. 70 5.18 2.fto 0,60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 *s ?r* j r(- n.i semi-coi)duciors reserves the right to change tost conditions, parameter limits and package dimen.sions without nonce. information furnished by nj somi-conduclors is helieved to he both accurate and reliable at the lime ofpoin lo press. | l.nvever. \.l semi-comluctors assumes no rosponsihilit> lor any errors or omissions discovered in its use \ senn-( .inductor-, encuuni.ues eiisiomers to \erily that datasheels are ainvnl hel'ore placing orders. quality 5emj-conductors
silicon npn power transistor 2SC2518 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vee(sat) icbo icer icex iebo hfe-i hfe-2 parameter collector-emitter sustaining voltage t collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc= 50ma; ib= 0 lc= 2a; ib= 0.4a lc= 2a; ib= 0.4a vcb= 400v; ie= 0 vce= 400v; rbe= 51 n , ta=125"c vce= 400v; vbe |
